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MESOSCOPE Success to locate Gate Oxide Defect via EBIRCH from Kleindiek PS8

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MESOSCOPE Success to locate Gate Oxide Defect via EBIRCH from Kleindiek PS8

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  • 2020-05-07
MESOSCOPE Success to locate Gate Oxide Defect via EBIRCH from Kleindiek PS8

 

   

MESOSCOPE, the world leading nano probe tip manufacturer, also is the first priority of distributor for Kleindiek Nanotech in China and Taiwan region. 
Recently, MESOSCOPE success to use Kleindiek PS8 system to locate gate oxide defect in transistor size level by EBIRCH methodology at Laboratory of Mesoscope Technology.
With pre-cleanness probe tips and sensitivity of EBIC amplifier,  MESOSCOPE has capable to detect and locate equal or above100fA leakage current by EBIC, EBAC, EBIRCH and RCI. 
 

Following as reference case of E-Beam Induced Resistance Change (EBIRCH)

First, Via InGaAs to locate Junction leak roughly.

   

Delayer to an area that source or drain are connected.
Via methodology of EBIRCH to locate the defect precisely in transistor size level. 

   

After EBIRCH, the defect area could be located at precise area. With this methodology, it brings tremendous defect hitting rate. After Cross-section and TEM, the issue of gate oxide leak is proof.

   

 

Following is a brief description about E-Beam application 

Technique

Method

Object

Defect Sorts

Full Name of Technique

EBAC

absorb

Metal Line

open, short

Electron Beam Absorbed Current

EBIC

e-p pair

p-n junction

p-n junction

Electron Beam Induced Current

EBIRCH

Heat

Different material

short

Electron Beam Induced Resistance Change

RCI

Absorb

Metal line

Local High R

Resistive Contrast Imaging

 

Feel free to contact with MESOSCOPE, if there is any idea or inquiry: +886-3-666-1059

MESOSCOPE is the world leader in Nano-scale metallic probe manufacturer.

2F.-2, No.9, Zhanye 1st Rd., East Dist., Hsinchu City 30078, Taiwan

886-3-6661059

mesoscope@mesoscope.com.tw

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