MESOSCOPE Success to locate defect via EBIRCH from Mesoscope’s tips

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MESOSCOPE Success to locate defect via EBIRCH from Mesoscope’s tips

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  • 2020-06-19
MESOSCOPE Success to locate defect via EBIRCH from Mesoscope’s tips

 

Recently, MESOSCOPE success to use Kleindiek PS8 system and Mesoscope's tips to locate defect in transistor size level by E-Beam methodology at Laboratory of Mesoscope Technology.

  

First, we check that there is drain to source leak. And we find out the leak current is very small. The current is 3x10^-10.

      

 

Then, via methodology of EBIRCH to locate the defect. We setting bias from 4V to 3V and find out that the signal range is roughly. When performing bias at 2V, there is no signal.

   4V 

SEM EBIRCH Overlay

     

     3.5V       

SEM EBIRCH Overlay

 

  3V

SEM EBIRCH Overlay

 

  2V

SEM EBIRCH Overlay

 

At last, we could locate the defect clearly when setting the bias at 2.5V. There is a drain to source leak as below with red circle.

SEM EBIRCH Overlay

 


Mesoscope uses CR35B(curve rate 35nm) for the measurement. CR35B is suitable for the technology between 28nm to 45nm, and Mesoscope also pre-bent the tips. You could use Mesoscope’s tip directly without tip cross clean. Here is the introduction of CR35 as below:

Type Suitable for measuring Process Feature
MSCT-SA025TPL013TC025A1-CR35  28nm~45nm
Straight type.
Suitable for FEI, Kleindiek, Tescan, Joel and Zeiss system.
MSCT-SA025TPL013TC025A1-CR35B  28nm~45nm
B type means “pre-bent”.
Suitable for FEI, Kleindiek, Tescan, Joel and Zeiss system.
MSCT-SA025TPL013TC025A1-CR35BT  28nm~45nm
BT type means “pre-bent and sleeve into thermal/electrical demagnetized capillary”.
Suitable for FEI, Kleindiek, Tescan, Joel, Zeiss and Imina system.
MSCT-SA025TPL013TC025A1-CR35BB  28nm~45nm BB type means “pre-bent and double bent”.
MS-CR35  28nm~45nm Suitable for Hitachi system.

 

To see more information, please check our website: http://www.mesoscope.com.tw/product/6/21

 

  Following is a brief description about E-Beam application 

Technique

Method

Object

Defect Sorts

Full Name of Technique

EBAC

absorb

Metal Line

open, short

Electron Beam Absorbed Current

EBIC

e-p pair

p-n junction

p-n junction

Electron Beam Induced Current

EBIRCH

Heat

Different material

short

Electron Beam Induced Resistance Change

RCI

Absorb

Metal line

Local High R

Resistive Contrast Imaging

 

  Feel free to contact with MESOSCOPE, if there is any idea or inquiry: +886-3-666-1059